Semiconductor device having interconnection structure
US6765251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1999 |
| Grant date | Jul 20, 2004 |
| Priority date | — |
| Expiry date | Jan 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the semiconductor device, in order to meet the demand of reduced diameter of a contact hole along with the miniaturization of the semiconductor device, an anti-HF side wall film which is not etched by a hydrofluoric acid, formed of an isolating film such as nitride film, is provided on the side wall of contact hole. Further, a second impurity region which is connected to one of the pair of n type source/drain regions and a first impurity region reaching a p type isolation region are provided in silicon substrate 1 near the lower end of contact hole. Because of this structure, it becomes possible to prevent expansion of the diameter for forming the interconnection layer, as desired in the miniaturized semiconductor device, and therefore a semiconductor device and manufacturing method thereof which stabilize operation characteristic of the semiconductor device can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.