Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation

US6767783B2 · kind B2 · utility

Assignee

• Mississippi State University Research and Technology Corporation · US

Inventors

• Jeffrey Casady · Starkville, US
• Geoffrey Ewald Carter · Saltillo, US
• Yaroslav Koshka · Starkville, US
• Michael S. Mazzola · Ocean Springs, US
• Igor Sankin · Starkville, US

Key dates

• Filing date: Jul 12, 2002
• Grant date: Jul 27, 2004
• Expiry date: Jul 12, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gate and base regions of static induction transistors and bipolar junction transistors can be formed in a self-aligned process. A method of making planar diodes and planar edge termination structures (e.g., guard rings) is also provided.