Flash memory element and manufacturing method thereof
US6768158B2 · kind B2 · utility
57Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Sep 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
Abstract
The present invention provides a flash memory element and its manufacturing method having improved overall memory characteristics by constituting a double-gate element for improving the scaling down characteristic of flash memory element. With the above double-gate flash memory structure, a flash memory element in the present invention improves the scaling down characteristic and the programming and retention characteristic of a flash memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.