Jong Ho Lee
425Patents
21h-index
661Co-inventors
93Inventor score
Filing activity: Feb 28, 1997 → Jan 31, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6048756A | Method for making a silicon-on-insulator MOS transistor using a selective SiGe epitaxy | Electricity | 164 | Expired |
| US6885055B2 | Double-gate FinFET device and fabricating method thereof | Electricity | 149 | Expired |
| US6815285B2 | Methods of forming dual gate semiconductor devices having a metal nitride layer | Electricity | 117 | Expired |
| US5917477A | Touch screen input apparatus for chip mounter, chip mounter including the same and method for controlling the chip mounter | Emerging Cross-Sectional Technologies | 60 | Expired |
| US7651729B2 | Method of fabricating metal silicate layer using atomic layer deposition technique | Chemistry; Metallurgy | 60 | Active |
| US6768158B2 | Flash memory element and manufacturing method thereof | Electricity | 57 | Expired |
| US8825262B2 | System and method of deriving parking trajectory for vehicle | Performing Operations; Transporting | 49 | Active |
| US7898600B2 | Apparatus for providing multiple screens and method of dynamically configuring multiple screens | Physics | 46 | Active |
| US8229645B2 | Automatic parking system for vehicle | Performing Operations; Transporting | 45 | Active |
| US7915710B2 | Method of fabricating a semiconductor device, and semiconductor device with a conductive member extending through a substrate and connected to a metal pattern bonded to the substrate | Electricity | 41 | Active |
| US8155046B2 | Apparatus and method for interference cancellation and synchronization maintenance over interference channel estimation in communication system based on full-duplex relay | Electricity | 40 | Active |
| US10366834B1 | Ceramic electronic component | Electricity | 39 | Active |
| US7148541B2 | Vertical channel field effect transistors having insulating layers thereon | Electricity | 37 | Expired |
| US6680224B2 | Methods of forming and operating field effect transistors having gate and sub-gate electrodes | Electricity | 34 | Expired |
| US7554201B2 | Tin-bismuth (Sn-Bi) family alloy solder and semiconductor device using the same | Electricity | 32 | Active |
| US7005700B2 | Double-gate flash memory device | Electricity | 31 | Expired |
| US9431099B2 | Neuromorphic device with excitatory and inhibitory functionalities | Electricity | 25 | Active |
| US10179036B2 | Variable cross-sectioned orthodontic archwire equipped with integrated hook | Human Necessities | 24 | Active |
| US9300111B2 | Semiconductor light emitting device | Electricity | 24 | Active |
| US6165842A | Method for fabricating a non-volatile memory device using nano-crystal dots | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7232164B2 | Safety apparatus for vehicle door handle assemblies | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7906814B2 | Fin field effect transistor having low leakage current and method of manufacturing the FinFET | Electricity | 21 | Active |
| US7547951B2 | Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same | Electricity | 21 | Active |
| US7867839B2 | Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors | Electricity | 19 | Active |
| US9177865B2 | Method for fabricating semiconductor device having multiple threshold voltages | Electricity | 19 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.