Superjunction device with improved avalanche capability and breakdown voltage
US6768170B2 · kind B2 · utility
33Cited by
6References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2003 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A superjunction device has a plurality of equally spaced P columns in an N− epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge balance in the N− epi region and the P columns thereby to increase avalanche energy. An implant dose of 1.1E13 or greater is used to form the P columns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.