Plasma process chamber monitoring method and system used therefor
US6768269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.