Multiple-mode memory and method for forming same
US6768661B2 · kind B2 · utility
46Cited by
31References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 27, 2002 |
| Grant date | Jul 27, 2004 |
| Priority date | — |
| Expiry date | Jun 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multiple-mode memory includes a three-dimensional array of word lines, bit lines and memory cells. The memory cells are arranged in multiple vertically stacked layers. In some layers the memory cells are implemented as field-programmable write-once memory cells, and in other layers the memory cells are implemented as field-programmable re-writable memory cells. In this way, both re-writability and permanent data storage are provided in an inexpensive, single-chip solution. Additional types and numbers of types of memory cells can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.