Integrated dynamic memory with control circuit for controlling a refresh mode of memory cells, and method for driving the memory

US6768693B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Robert Feurle · Neubiberg, DE
• Thomas Borst · Neubiberg, DE
• Jens Egerer · Birkenfeld, DE

Key dates

• Filing date: Feb 18, 2003
• Grant date: Jul 27, 2004
• Expiry date: Feb 18, 2023

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2207/2227
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

An integrated dynamic memory contains a control circuit for controlling a refresh mode in which the memory cells undergo refreshing of their contents. A controllable frequency generator serves for setting a refresh frequency. A temperature sensor circuit detects a temperature of the memory and outputs a first reference value, and an externally writable circuit is provided for outputting a second reference value. The temperature sensor circuit and the externally writable circuit are alternatively connectible to the control input of the frequency generator for setting the refresh frequency. If the externally writable circuit has been written, the second reference value, which corresponds to a temperature, is fed to the frequency generator; otherwise, the first reference value is supplied. In this manner, users of the memory that are unable to measure temperature can expediently optimize the power consumption that is necessary for standby mode and reduce it at low temperatures.