Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same
US6770402B2 · kind B2 · utility
11Cited by
4References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2001 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Dec 26, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.