Method of making multiple work function gates by implanting metals with metallic alloying additives
US6770521B2 · kind B2 · utility
36Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | Apr 29, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Jul 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A method of forming a first and second transistors with differing work function gates by differing metals with a second metal selectively implanted or diffused into a first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.