Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
US6770536B2 · kind B2 · utility
62Cited by
28References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Oct 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.