Low temperature plasma Si or SiGe for MEMS applications
US6770569B2 · kind B2 · utility
21Cited by
7References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Sep 23, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.