Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer
US6770570B2 · kind B2 · utility
5Cited by
16References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device 100 includes a low-k dielectric insulator 104. In the preferred embodiment, a low-k dielectric material 104 is deposited. This material 104 is then cured using a plasma cure step. The cure process causes the density of the top portion 106 of layer 104 to be increased. The higher density portion 106, however, also has a higher dielectric constant. As a result, the dielectric constant of the layer 104 can be reduced by removing this higher density portion 106. This leads to a lower dielectric constant (e.g., less than about 3) of the bulk film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.