ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit
US6770913B2 · kind B2 · utility
2Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Nov 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.