III nitride semiconductor substrate for ELO
US6770914B2 · kind B2 · utility
10Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Jun 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02502
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III nitride semiconductor substrate for ELO is provided for forming a III nitride film whose surface is controlled independent of the film's thickness. A III nitride underlayer including at least Al is directly formed on a base made of e.g. a sapphire single crystal, and not formed through a buffer layer formed at a low temperature. After that patterns made of e.g SiO2 are formed on the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.