Photoconductive thin film for reduction of plasma damage
US6770937B1 · kind B1 · utility
0Cited by
2References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (200) that includes a semiconductor substrate (210), semiconductor features (230, 235, 240, 260) located thereover and an insulating photoconductive layer (270) coupling the semiconductor features (230, 235, 240, 260). The photoconductive layer (270) is configured to provide conductivity between the semiconductor features (230, 235, 240, 260) in a presence of a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.