Semiconductor device having silicide film formed in a part of source-drain diffusion layers and method of manufacturing the same
US6770942B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 20, 2002 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | Nov 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an element separating insulating film provided on a semiconductor substrate to separate an element region. A gate electrode is arranged above the element region. Source/drain regions are formed in the semiconductor substrate to sandwich a region below the gate electrode. A silicide film is provided on the source/drain regions, extending onto the element separating insulating film. A contact hole extends through the interlayer insulating film, which is provided on the element separating insulating film and the silicide film, and reaches the silicide film. Ends of the contact hole are positioned on the silicide film and on the element separating insulating film. The contact hole includes a trench portion whose one end contacts with the edge of the silicide film in the bottom of the contact hole and in an upper portion of the element separating insulating film. A wiring layer is arranged in the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.