Bipolar transistor

US6770953B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Boeck · Putzbrunn, DE
• Klaus Aufinger · Ottobrunn, DE
• Markus Zeiler · Nittendorf, DE

Key dates

• Filing date: Jul 31, 2002
• Grant date: Aug 3, 2004
• Expiry date: Jul 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/135

Abstract

A bipolar transistor is provided in which the product of base-collector capacitance and collector resistance can be reduced through a layout optimization, which leads to an improvement of the critical transistor parameters. The bipolar transistor has an emitter formed from a plurality of emitter elements, a plurality of base contacts and a plurality of collector contacts, these elements being provided in a specific arrangement with respect to one another for the formation of the transistor layout. The invention provides for the emitter to have at least one closed emitter configuration, the at least one emitter configuration bounding at least one emitter inner space, which can in turn be divided into a plurality of partial spaces. At least one of the base contacts is arranged in the emitter inner space, while at least one other base contact and the collector contacts are arranged outside the emitter configuration.