Plasma processing apparatus for processing semiconductor wafer using plasma
US6771481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2001 |
| Grant date | Aug 3, 2004 |
| Priority date | — |
| Expiry date | May 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus comprises: a body that comprises a vacuum processing chamber with a wafer stage on which a semiconductor wafer is held, a plasma producing unit for producing plasma within the vacuum chamber, and a high frequency source for applying a high frequency bias voltage to the wafer stage. A control unit controls various parameters of the body of the plasma processing apparatus. The control unit comprises a detecting unit for detecting the high frequency voltage or high frequency current applied to the wafer stage and for calculating a difference in phase between the high frequency voltage and the high frequency current, and a unit for obtaining a characteristic of the plasma or an electric characteristic of the plasma processing apparatus based on the detected high frequency voltage, the detected high frequency current, and the obtained difference in phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.