Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same
US6773508B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Nov 5, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.