Osaka Prefecture
19Patents
1Active
19Granted
33Portfolio score
Filing activity: Mar 17, 1988 → Feb 14, 2005 · 1 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5518678A | Adsorptive honeycomb-shaped ceramic structure and method for its production | Emerging Cross-Sectional Technologies | 36 | Expired |
| US7790228B2 | Method for high-efficiency synthesis of carbon nanostructure | Chemistry; Metallurgy | 27 | Active |
| US4828931A | Superconductor for magnetic field shielding | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4920011A | Magnetic field shield including a superconductive film | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5466305A | Method of treating the surface of titanium | Chemistry; Metallurgy | 12 | Expired |
| US4942379A | Superconductor for magnetic field shield | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6105417A | Gas sensor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US4869835A | Ion source | Electricity | 6 | Expired |
| US5089223A | Fe-Cr-Ni-Al ferritic alloys | Chemistry; Metallurgy | 4 | Expired |
| US6908589B2 | High manganese cast iron containing spheroidal vanadium carbide and method for making therof | Chemistry; Metallurgy | 2 | Expired |
| US7281931B2 | Electrical connector for connecting electrical units, electrical device, and production method for producing electrical device | Electricity | 1 | Expired |
| US6927144B2 | Method for manufacturing buried insulating layer type single crystal silicon carbide substrate | Electricity | 1 | Expired |
| US6773508B2 | Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same | Chemistry; Metallurgy | 1 | Expired |
| US7291229B2 | Method of surface treatment of titanium metal | Chemistry; Metallurgy | 0 | Expired |
| US6743729B2 | Etching method and etching apparatus of carbon thin film | Emerging Cross-Sectional Technologies | 0 | Expired |
| US7393763B2 | Manufacturing method of monocrystalline gallium nitride localized substrate | Electricity | 0 | Expired |
| US7077875B2 | Manufacturing device for buried insulating layer type single crystal silicon carbide substrate | Electricity | 0 | Expired |
| US7084049B2 | Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate | Electricity | 0 | Expired |
| US7128788B2 | Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.