Patent · US Expired

Method for contact-connecting a semiconductor component

US6773956B2 · kind B2 · utility

1Cited by

19References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Holger Huebner · Neustadt an der Aisch, DE
Vaidyanathan Kripesh · Singapore, SG

Key dates

Filing date	Jan 28, 2003
Grant date	Aug 10, 2004
Priority date	—
Expiry date	Jan 28, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19043
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A solder metal made of a eutectic or stoichiometric composition including at least two metallic or semiconducting elements is applied to a contact (of the semiconductor component, brought into contact with the metal layer of a metallized film and alloyed by heating into the metal layer of the film, thereby producing an electrically conductive connection having a higher melting point. A solder metal that is particularly suitable for such a purpose is the Bi22In78 (melting point 73° C.), Bi43Sn57, or In52Sn48, or BiIn, or BiIn2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.