Method of fabricating shallow trench isolation
US6774007B2 · kind B2 · utility
8Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Sep 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating shallow trench isolation. In the method, a refill step of oxide layer and a step of forming a sacrificial layer on the semiconductor substrate are applied after filling insulating layer into the shallow trenches. The purpose of the steps is to protect the oxide layer on the semiconductor substrate and the corner of the shallow trenches, used to isolate the STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.