Method of fabricating spherical quantum dots device by combination of gas condensation and epitaxial technique
US6774014B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2003 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Mar 28, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a device with spherical quantum dots by a combination of gas condensation and an epitaxial technique includes the following steps: (a) a quantum dots growth step, when the quantum dots are grown on the substrate by a gas condensation method; (b) a quantum dots processing step, when an ultrasonic cleaner is used with an organic solvent to vibrate the substrate in which quantum dots have been grown in step (a), or the substrate in which quantum dots have been grown in step (a) is thermally annealed at a high temperature to obtain a thin layer of quantum dots; and (c) an epitaxial layer cover step, when an epitaxial layer is covered over the quantum dots processed by step (b) by an epitaxial technique. By virtue of the above processes, a device with completely spherical quantum dots is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.