Metal stack for local interconnect layer
US6774033B1 · kind B1 · utility
5Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Nov 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a local interconnect layer in an integrated circuit is formed by depositing a first film over an oxide layer and depositing a second film over the first film. The first film may comprise titanium nitride, while the second film may comprise tungsten, for example. The first film and the second film may be deposited in-situ by sputtering. The second film may be etched using the first film as an etch stop, and the first film may be etched using the oxide layer as an etch stop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.