Gorley Lau
9Patents
5h-index
9Co-inventors
48Inventor score
Filing activity: Nov 13, 1997 → Dec 3, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6140228A | Low temperature metallization process | Electricity | 48 | Expired |
| US6969448B1 | Method for forming a metallization structure in an integrated circuit | Electricity | 45 | Expired |
| US6756302B1 | Low temperature metallization process | Electricity | 11 | Expired |
| US6187667A | Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit | Electricity | 7 | Expired |
| US6906421B1 | Method of forming a low resistivity Ti-containing interconnect and semiconductor device comprising the same | Electricity | 7 | Expired |
| US6774033B1 | Metal stack for local interconnect layer | Electricity | 5 | Expired |
| US6455427B1 | Method for forming void-free metallization in an integrated circuit | Electricity | 3 | Expired |
| US6977217B1 | Aluminum-filled via structure with barrier layer | Electricity | 2 | Expired |
| US6534398B2 | Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.