High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application
US6774054B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02356
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a PCMO thin film in a RRAM device includes preparing a substrate; depositing a metal barrier layer on the substrate; forming a bottom electrode on the barrier layer; spin-coating a layer of Pr1−xCaxMnO3 (PCMO) on the bottom electrode using a PCMO precursor; baking the PCMO thin film in one or more baking steps; annealing the PCMO thin film in a first annealing step after each spin-coating step; repeating the spin-coating step, the baking step and the first annealing step until the PCMO thin film has a desired thickness; annealing the PCMO thin film in a second annealing step, thereby producing a PCMO thin film having a crystalline structure of Pr1−xCaxMnO3, where 0.2<=X<=0.5; depositing a top electrode; patterning the top electrode; and completing the RRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.