David R. Evans
104Patents
24h-index
32Co-inventors
90Inventor score
Filing activity: Oct 3, 1986 → Jun 6, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7968419B2 | Back-to-back metal/semiconductor/metal (MSM) Schottky diode | Electricity | 109 | Active |
| US7029924B2 | Buffered-layer memory cell | Physics | 94 | Expired |
| US6194310A | Method of forming amorphous conducting diffusion barriers | Electricity | 81 | Expired |
| US5939334A | System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides | Electricity | 78 | Expired |
| US6200866A | Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET | Electricity | 70 | Expired |
| US6410462B1 | Method of making low-K carbon doped silicon oxide | Electricity | 64 | Expired |
| US6573134B2 | Dual metal gate CMOS devices and method for making the same | Electricity | 62 | Expired |
| US7407858B2 | Resistance random access memory devices and method of fabrication | Electricity | 61 | Active |
| US7205238B2 | Chemical mechanical polish of PCMO thin films for RRAM applications | Electricity | 56 | Expired |
| US7060586B2 | PCMO thin film with resistance random access memory (RRAM) characteristics | Physics | 52 | Expired |
| US5936707A | Multi-level reticle system and method for forming multi-level resist profiles | Physics | 46 | Expired |
| US7633108B2 | Metal/semiconductor/metal current limiter | Electricity | 46 | Active |
| US6620664B2 | Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same | Electricity | 46 | Expired |
| US7446010B2 | Metal/semiconductor/metal (MSM) back-to-back Schottky diode | Electricity | 43 | Active |
| US7160819B2 | Method to perform selective atomic layer deposition of zinc oxide | Electricity | 37 | Expired |
| US6290736A | Chemically active slurry for the polishing of noble metals and method for same | Chemistry; Metallurgy | 34 | Expired |
| US5906910A | Multi-level photoresist profile method | Physics | 34 | Expired |
| US7271081B2 | Metal/ZnOx/metal current limiter | Electricity | 32 | Expired |
| US6992025B2 | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation | Electricity | 27 | Expired |
| US6774054B1 | High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application | Electricity | 27 | Expired |
| US5907762A | Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing | Electricity | 26 | Expired |
| US6939724B2 | Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer | Physics | 26 | Expired |
| US5914202A | Method for forming a multi-level reticle | Physics | 26 | Expired |
| US7256429B2 | Memory cell with buffered-layer | Physics | 25 | Expired |
| US6133106A | Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement | Electricity | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.