Field effect device having a drift region and field shaping region used as capacitor dielectric
US6774434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Nov 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
Abstract
A field effect transistor semiconductor device (1) comprises a source region (33), a drain region (14) and a drain drift region (11), the device having a field shaping region (20) adjacent the drift region (11) and arranged such that, in use, when a voltage is applied between the source (33) and drain (14) regions and the device is non-conducting, a substantially constant electric field is generated in the field shaping region (20) and accordingly in the adjacent drift region (11). The field shaping region (20), which may be intrinsic semiconductor, is arranged to function as a capacitor dielectric region (20) between a first capacitor electrode region (21) and a second capacitor electrode region (22), the first and second capacitor electrode regions (21, 22) being adjacent respective ends of the dielectric region (20) and having different electron energy barriers. The first and second capacitor electrode regions (21, 22) may be opposite conductivity semiconductor regions, or they may be a semiconductor region (21) and a Schottky barrier region (224, FIG. 4). The device may be an insulated gate device (1, 13, 15, 17, 171, 172, 19, 12) particularly suitable for high or low voltage D…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.