Semiconductor device with a collector contact in a depressed well-region

US6774455B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Jeffrey A. Babcock · Neufahrn, DE
• Christoph Dirnecker · Unterschleißheim, DE
• Angelo Pinto · Augusta, IT
• Scott Balster · Dallas, US
• Michael Schober · Steyr, AT
• Alfred Haeusler · Freising, DE

Key dates

• Filing date: Sep 30, 2002
• Grant date: Aug 10, 2004
• Expiry date: Sep 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. At least part of the active region is removed to form a shallow trench opening. A dielectric layer is formed proximate the active region at least partially within the shallow trench opening. At least part of the dielectric layer is removed to form a collector contact region. A collector contact may be formed at the collector contact region. The collector contact may be operable to electrically contact the buried layer.