Patent · US Expired

Configuration of fuses in semiconductor structures with Cu metallization

US6774456B2 · kind B2 · utility

4Cited by

8References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andreas Rusch · Dresden, DE
Jens Moeckel · Hersbruck, DE

Key dates

Filing date	Dec 10, 2001
Grant date	Aug 10, 2004
Priority date	—
Expiry date	Mar 12, 2022

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S257/91
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A configuration of fuses in a semiconductor structure having Cu metallization planes is provided. The semiconductor structure has an Al metal layer on the topmost interconnect plane for providing Al bonding pads. The fuses are configured as Al fuses and, in the semiconductor structure having Cu metallization planes, are provided above the diffusion barrier of the topmost Cu metallization plane but below a passivation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.