Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
US6774461B2 · kind B2 · utility
7Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | Feb 15, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Feb 15, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.