High frequency semiconductor device
US6774484B2 · kind B2 · utility
14Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2002 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Mar 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer wiring structure for MMICs includes a power-supply wiring formed of a multilayer wiring (a plurality of power-supply lines). The wires are interconnected by throughholes. A power-supply current is divided and supplied to the lines. A large current can be supplied to the entirety of the multilayer wiring, even when the width of each of the lines is reduced. The multilayer wiring structure has an improved degree of freedom in the layout of wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.