RF plasma processing method and RF plasma processing system
US6774570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2003 |
| Grant date | Aug 10, 2004 |
| Priority date | — |
| Expiry date | Feb 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This application discloses the technique of the RF plasma processing using two RF waves of different frequencies, where plasma is generate and retained sufficiently and stably. The first frequency is for generating plasma by igniting a discharge, and the second frequency is for generating self-biasing voltage at a substrate to be processed. The wave of the second frequency is applied with a time-lag after applying the RF wave of the first frequency. This application also discloses the impedance matching technique in the RF plasma processing, where impedance to be provided is optimized both for igniting the discharge and for stabilizing the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.