Mask product made by selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabricat layout
US6777138B2 · kind B2 · utility
200Cited by
16References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques provided for fabricating a device include forming a fabrication layout, such as a mask layout, for a physical design layer, such as a design for an integrated circuit, and identifying evaluation points on an edge of a polygon corresponding to the design layer for correcting proximity effects. Included are techniques that correct for proximity effects associated with an edge in a layout corresponding to the design layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.