Dielectric element and manufacturing method therefor
US6777248B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2000 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | May 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/689
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ferroelectric element having a high Pr and a low Ec and having a good withstand voltage, which is in the form of a thin film using a ferroelectric layer containing insulating particles, is provided. The ferroelectric layer containing the insulating particles is effective to suppress leakage current caused through grain boundaries of crystals, and hence to exhibit a high Pr and a low Ec and a good withstand voltage. The ferroelectric element has a structure in which such a ferroelectric layer in the form of a thin film is sandwiched between electrodes. By incorporating the ferroelectric element in a field effect transistor structure, it is possible to realize a highly integrated semiconductor device for detecting reading or writing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.