Method of fabricating a light emitting device and light emitting device
US6777257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2003 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer. A current blocking layer which comprises a Group III-V compound semiconductor having a conductivity type different from that of the current spreading layer is formed in the midway in the thickness-wise direction of the current spreading layer as being buried therein At least a portion of the current spreading layer covering the current blocking layer on the electrode side is formed by the hydride vapor-phase epitaxy process (the second vapor-phase growth step). T…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.