Method for protecting a wafer backside from etching damage
US6777334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Oct 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for protecting a silicon semiconductor wafer backside surface for removing polymer containing residues from a wafer process surface including providing a silicon semiconductor wafer having a process surface and a backside surface said process surface including metal containing features said process surface at least partially covered with polymer containing residues and said backside surface including exposed silicon containing areas; forming an etching resistant oxide layer over the exposed silicon containing areas; and, subjecting the silicon semiconductor wafer to a series of cleaning steps including a wet etchant corrosive to the exposed silicon containing areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.