Semiconductor device having protection circuit implemented by bipolar transistor for discharging static charge current and process of fabrication
US6777723B1 · kind B1 · utility
7Cited by
7References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 20, 1999 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Oct 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A protection circuit prevents a circuit component from static charge unavoidably applied to a signal terminal, and includes a vertical bipolar transistor having an n-type deep well serving as an emitter region, a p-type well formed on the n-type deep well and serving as a base region and an n-type impurity region formed in the p-type well and serving as a collector region so as to reduce a base resistance regardless of a shallow trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.