Semiconductor device and complementary semiconductor device
US6777728B2 · kind B2 · utility
6Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jan 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
A semiconductor device includes a channel layer, a gate electrode formed on the channel layer, a p-type source region formed on a first side of the channel layer, and a p-type drain region formed on a second side of the channel layer. A heavy-hole band and a light-hole band are separated by compressive strain applied isotropically in an in-plane direction in the channel layer. A channel direction connecting the p-type source and drain regions is set substantially to a direction to maximize hole mobility in the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.