Inventor · Hsinchu, TW

Tetsuji Ueno

31Patents
4h-index
27Co-inventors
63Inventor score

Filing activity: Dec 27, 2002 → Jan 24, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7952147B2 Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same Electricity 121 Active
US7361563B2 Methods of fabricating a semiconductor device using a selective epitaxial growth technique Electricity 74 Active
US7601983B2 Transistor and method of manufacturing the same Electricity 8 Expired
US6777728B2 Semiconductor device and complementary semiconductor device Electricity 6 Expired
US7439596B2 Transistors for semiconductor device and methods of fabricating the same Electricity 4 Expired
US7611973B2 Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same Electricity 3 Active
US7611951B2 Method of fabricating MOS transistor having epitaxial region Electricity 3 Active
US11296187B2 Seal material for air gaps in semiconductor devices Electricity 3 Active
US7714394B2 CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the same Electricity 3 Expired
US7682888B2 Methods of forming NMOS/PMOS transistors with source/drains including strained materials Electricity 2 Active
US7365010B2 Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same Electricity 2 Expired
US7582535B2 Method of forming MOS transistor having fully silicided metal gate electrode Electricity 2 Expired
US7619285B2 Method of fabricating CMOS transistor and CMOS transistor fabricated thereby Electricity 2 Active
US7728393B2 Semiconductor device Electricity 1 Active
US7791146B2 Semiconductor device including field effect transistor and method of forming the same Electricity 1 Active
US11688766B2 Seal material for air gaps in semiconductor devices Electricity 1 Active
US7776723B2 Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device Emerging Cross-Sectional Technologies 1 Active
US12324200B2 Seal material for air gaps in semiconductor devices Electricity 0 Active
US10453925B2 Epitaxial growth methods and structures thereof Electricity 0 Active
US11848238B2 Methods for manufacturing semiconductor devices with tunable low-k inner air spacers Electricity 0 Active
US12369388B2 Semiconductor devices with tunable low-K inner air spacers Electricity 0 Active
US12369374B2 Epitaxial growth methods and structures thereof Electricity 0 Active
US11626482B2 Air spacer formation with a spin-on dielectric material Emerging Cross-Sectional Technologies 0 Active
US12094952B2 Air spacer formation with a spin-on dielectric material Emerging Cross-Sectional Technologies 0 Active
US8445968B2 Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.