Trench bipolar transistor
US6777780B2 · kind B2 · utility
3Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2002 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jul 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
The invention relates to a trench bipolar transistor structure, having a base 7, emitter 9 and collector 4, the latter being divided into a higher doped region 3 and a lower doped drift region 5. An insulated gate 11 is provided to deplete the drift region 5 when the transistor is switched off. The gate 11 and/or doping levels in the drift region 5 are arranged to provide a substantially uniform electric field in the drift region in this state, to minimise breakdown. In particular, the gate 11 may be seminsulating and a voltage applied along the gate between connections 21,23.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.