Process of fabricating semiconductor light emitting device
US6778308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2003 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Sep 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical optical modulator comprising: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type bonded to the first semiconductor layer; a third semiconductor layer of the second conductivity type; a dielectric layer formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode having a plurality of conductive pieces which are formed within the dielectric layer so as to have a net-like shape as a whole, to be separated from one another at the intersections of the net-like shape, and to be in contact with both the second semiconductor layer and the third semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.