Write circuit for a magnetic random access memory
US6778429B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2003 |
| Grant date | Aug 17, 2004 |
| Priority date | — |
| Expiry date | Jul 25, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A write circuit for selectively writing one or more magnetic memory cells in an MRAM includes at least one programmable current source being couplable to one or more global word lines in the MRAM, the programmable current source including an input for receiving a first control signal and an output, the programmable current source generating at least a portion of a write current at the output having a magnitude which varies in response to the first control signal. The write circuit further includes a plurality of current sinks, each current sink being couplable to one or more global word lines in the MRAM, each current sink including an input for receiving a second control signal, each current sink returning at least a portion of the write current in response to the second control signal. A controller operatively coupled to the at least one programmable current source and the plurality of current sinks is operative to generate the first and second control signals and to selectively distribute the write current across a plurality of global word lines in the MRAM so that stray magnetic field interaction between selected memory cells and half-selected and/or unselected memory cells in …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.