Yu Lu
30Patents
6h-index
20Co-inventors
69Inventor score
Filing activity: Dec 10, 2002 → Mar 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7109539B2 | Multiple-bit magnetic random access memory cell employing adiabatic switching | Physics | 35 | Expired |
| US6816405B1 | Segmented word line architecture for cross point magnetic random access memory | Physics | 30 | Expired |
| US6778429B1 | Write circuit for a magnetic random access memory | Physics | 21 | Expired |
| US8772782B2 | Transistor employing vertically stacked self-aligned carbon nanotubes | Emerging Cross-Sectional Technologies | 18 | Active |
| US8895371B2 | Transistor employing vertically stacked self-aligned carbon nanotubes | Emerging Cross-Sectional Technologies | 14 | Active |
| US6958502B2 | Magnetic random access memory cell | Electricity | 7 | Expired |
| US6816431B1 | Magnetic random access memory using memory cells with rotated magnetic storage elements | Physics | 6 | Expired |
| US7505337B2 | Method and apparatus for repairing a shorted tunnel device | Physics | 3 | Active |
| US8228706B2 | Magnetic shift register memory device | Emerging Cross-Sectional Technologies | 3 | Active |
| US9041076B2 | Partial sacrificial dummy gate with CMOS device with high-k metal gate | Electricity | 3 | Active |
| US7250662B2 | Magnetically lined conductors | Electricity | 3 | Expired |
| US8994080B2 | Stacked carbon-based FETs | Electricity | 3 | Active |
| US9087811B2 | Self aligned embedded gate carbon transistors | Electricity | 3 | Active |
| US9299795B2 | Partial sacrificial dummy gate with CMOS device with high-k metal gate | Electricity | 3 | Active |
| US8952431B2 | Stacked carbon-based FETs | Electricity | 3 | Active |
| US7192787B2 | Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories | Physics | 2 | Expired |
| US8120946B2 | Stacked magnetic devices | Physics | 2 | Active |
| US8767446B2 | Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack | Electricity | 2 | Active |
| US7352639B2 | Method and apparatus for increasing yield in a memory circuit | Physics | 2 | Active |
| US8537588B2 | Magnetic shift register memory device | Emerging Cross-Sectional Technologies | 2 | Active |
| US9472640B2 | Self aligned embedded gate carbon transistors | Electricity | 2 | Active |
| US7747401B2 | Fast intrinsic mode decomposition of time series data with sawtooth transform | Physics | 1 | Active |
| US6975555B2 | Magnetic random access memory using memory cells with rotated magnetic storage elements | Physics | 1 | Expired |
| US12432899B2 | Method of preparing semiconductor structure having low dielectric constant layer | Electricity | 0 | Active |
| US9048216B2 | Self aligned embedded gate carbon transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.