Method for forming a semiconductor device
US6780703B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etch stop layer (12) is formed over a semiconductor substrate (10). An epitaxial layer (14) is formed overlying the etch stop layer (12). The combination of the epitaxial layer (14), etch stop layer (12), and semiconductor substrate (10) form a composite substrate (16). The composite substrate (16) is processed to fabricate a semiconductor device (21) over the epitaxial layer (14). Then the composite substrate (16) is mounted to a wafer carrier (32) to expose the semiconductor substrate (10) and the semiconductor substrate (10) is removed to substantially define a semiconductor device substrate (50) that comprises the epitaxial layer (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.