Method for forming charge storage node
US6780709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a charge storage node is disclosed. The method for forming a charge storage node prevents the bridge between cells and maximize the hole size of a cell forming portion to thus improve the properties of a device and increase product yield by depositing an oxide film having a predetermined thickness and forming a contact hole in order to fill the hole of a notch type generated by the etching difference between a damaged sacrificial oxide film and an oxide film for capacitor formation deposited thereon after enlarging the hole size by washing and dipping processes before the formation of the charge storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.