Method for forming a MIM (metal-insulator-metal) capacitor
US6780727B2 · kind B2 · utility
6Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2002 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Apr 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a metal-insulator-metal (MIM) capacitor using an organic anti-reflective coating (ARC) are described. The first electrode of the MIM capacitor is formed from a first metal layer. The organic ARC is applied, and the second electrode of the MIM capacitor is formed from a second metal layer. The organic ARC is then removed using a nominal clean technique. Because the organic ARC is removed, the performance of the MIM capacitor is improved. Specifically, the breakdown voltage of the MIM capacitor increases and the leakage current decreases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.