Semiconductor device with adhesion-improvement capacitor and process for producing the device
US6781172B2 · kind B2 · utility
3Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2001 |
| Grant date | Aug 24, 2004 |
| Priority date | — |
| Expiry date | Mar 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.