Sputtering method and sputtering apparatus
US6783640B2 · kind B2 · utility
4Cited by
13References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Aug 31, 2004 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.